npn bd241 ? a ? b ? c 23/10/2012 comset semiconductors 1/3 m m e e d d i i u u m m p p o o w w e e r r l l i i n n e e a a r r a a n n d d s s w w i i t t c c h h i i n n g g a a p p p p l l i i c c a a t t i i o o n n s s . . the bd241, a, b, c are the npn transistors mounted in jedec to-220 plastic package. they are the silicon epitaxial-base power trans istors for use in medium power linear and switching applications. the pnp complements are bd242, a, b, c. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) bd241 45 v bd241a 60 bd241b 80 BD241C 100 v cer collector-emitter voltage (r be = 100 ? ) bd241 55 v bd241a 70 bd241b 90 BD241C 115 v ebo emitter-base voltage (i c = 0) bd241 5.0 v bd241a bd241b BD241C i c collector current i c 3 a i cm 5 i b base current 1 a p t power dissipation @ t amb = 25 c 2 w @ t case = 25 c 40 w t j junction temperature 150 c t s storage temperature -65 to +150 thermal characteristics symbol ratings value unit r thj-amb thermal resistance, junction-ambient 62.5 c/w r thj-case thermal resistance, junction-case 3.13 c/w
npn bd241 ? a ? b ? c 23/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current v ce =30 v bd241 - - 0.3 ma v ce =30 v bd241a - - v ce =60 v bd241b - - v ce =60 v BD241C - - i ebo emitter cutoff current v be =5 v bd241 - - 1.0 ma bd241a - - bd241b - - BD241C - - i ces collector cutoff current (v be = 0) v ce =55 v bd241 - - 0.2 ma v ce =70 v bd241a - - v ce =90 v bd241b - - v ce =115 v BD241C - - v ceo(sus) collector-emitter sustaining voltage (i b = 0) (*) i c =30ma bd241 45 v bd241a 60 bd241b 80 BD241C 100 h fe dc current gain (*) v ce =4 v, i c =1 a bd241 25 - - - bd241a bd241b BD241C v ce =4 v, i c =3 a bd241 10 - - bd241a bd241b BD241C v ce(sat) collector-emitter saturation voltage (*) i c =3 a, i b =0.6 a bd241 - - 1.2 v bd241a bd241b BD241C v be(on) base-emitter voltage (*) v ce =4 v, i c =3 a bd241 - - 1.8 v bd241a bd241b BD241C h fe small signal current gain v ce =10 v i c =0.5 a f = 1khz bd241 20 - - bd241a bd241b BD241C v ce =10 v i c =0.5 a f = 1mhz bd241 3 - - - bd241a bd241b BD241C (*) pulse width 300 s, duty cycle 2.0%
npn bd241 ? a ? b ? c 23/10/2012 comset semiconductors 3/3 mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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